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MANUFACTURING METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL 发明申请

2022-07-31 4160 211K 0

专利信息

申请日期 2024-11-26 申请号 JP2003089790
公开(公告)号 JP2004292281A 公开(公告)日 2004-10-21
公开国别 JP 申请人省市代码 全国
申请人 TDK CORP
简介 PROBLEM TO BE SOLVED : To provide a manufacturing method of a garnet single crystal which substantially comprises high quality Ca, Nb, Ga, and O, and can be suitably used as a single crystal substrate for forming a bismuth-substituted rare earth/iron garnet single crystal without crystal defects by liquid phase epitaxial growth, and a single crystal. SOLUTION : This manufacturing method is a method to make a single crystal having a garnet structure substantially comprising Ca, Nb, Ga, and O by Czochralski method, and the composition ratio of Ca, Nb, and Ga is Ca : Nb : Ga=37.7-39.1 : 20.2-21.6 : 40.7-42.1 in molar ratio. This single crystal is substantially constituted of Ca, Nb, Ga and O, has a Garnet structure and the composition ratio of Ca, Nb and Ga, in molar ratio, is Ca : Nb : Ga=37.7-39.1 : 20.2-21.6 : 40.7-42.1.


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